High performance top-gated multilayer WSe2 field effect transistors
نویسندگان
چکیده
منابع مشابه
High-Performance Field-Effect-Transistors on Monolayer WSe2
Monolayer Tungsten Diselenide (WSe2) exhibits tremendous advantages as a channel material for next-generation field-effecttransistors (FETs). This paper reviews the relevant physics and properties of WSe2 and highlights the excellent scalability of monolayer WSe2 for ultra-short channel (sub-5 nm) FETs. The crucial role of metal-WSe2 contacts in determining the performance of monolayer WSe2 FET...
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Two-dimensional (2D) layered semiconductors are very promising for post-silicon ultrathin channels and flexible electronics due to the remarkable dimensional and mechanical properties. Besides molybdenum disulfide (MoS2), the first recognized 2D semiconductor, it is also important to explore the wide spectrum of layered metal chalcogenides (LMCs) and to identify possible compounds with high per...
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In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form...
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This work presents a systematic study toward the design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayer WSe2. Device measurements supported by ab initio density functional theory (DFT) calculations indicate that the d-orb...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2017
ISSN: 0957-4484,1361-6528
DOI: 10.1088/1361-6528/aa8081